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74AHCT1G06

NXP

Inverter

INTEGRATED CIRCUITS DATA SHEET 74AHC1G06; 74AHCT1G06 Inverter with open-drain output Product specification File under I...


NXP

74AHCT1G06

File Download Download 74AHCT1G06 Datasheet


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INTEGRATED CIRCUITS DATA SHEET 74AHC1G06; 74AHCT1G06 Inverter with open-drain output Product specification File under Integrated Circuits, IC06 2000 May 01 Philips Semiconductors Product specification Inverter with open-drain output FEATURES High noise immunity ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V Low power dissipation SOT353 package Output capability standard (open drain). DESCRIPTION 74AHC1G06; 74AHCT1G06 The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G06 provides the inverting buffer. The output of the 74AHC1G/AHCT1G06 devices is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. TYPICAL SYMBOL tPZL tPLZ CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. FUNCTION TABLE See note 1. INPUT inA L H Note 1. H = HIGH voltage level; L = LOW voltage level; Z = high impedance OFF-state. OUTPUT outY Z L PARAMETER propagation delay inA to outY propagation delay inA to outY input capacitance power dissipation capacit...




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