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74AHCT00

NXP

Quad 2-input NAND gate

INTEGRATED CIRCUITS DATA SHEET 74AHC00; 74AHCT00 Quad 2-input NAND gate Product specification Supersedes data of 1998 D...


NXP

74AHCT00

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INTEGRATED CIRCUITS DATA SHEET 74AHC00; 74AHCT00 Quad 2-input NAND gate Product specification Supersedes data of 1998 Dec 09 File under Integrated Circuits, IC06 1999 Sep 23 Philips Semiconductors Product specification Quad 2-input NAND gate FEATURES ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V Balanced propagation delays All inputs have Schmitt-trigger actions Inputs accept voltages higher than VCC For AHC only: operates with CMOS input levels For AHCT only: operates with TTL input levels Specified from −40 to +85 and +125 °C. DESCRIPTION The 74AHC/AHCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. The 74AHC/AHCT00 provides the 2-input NAND function. CI CO CPD Note 1. H = HIGH voltage level; L = LOW voltage level. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. FUNCTION TABLE See note 1. INPUT nA L L H H nB L H L H 74AHC00; 74AHCT00 OUTPUT nY H H H L TYPICAL SYMBOL tPHL/tPLH PARAMETER propagation delay nA, nB to nY input capacitance output capacitance power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 CONDITIONS AHC CL = 15 pF; VCC = 5 V 3.2 AHCT 3.3 3.0 4.0 7.0 ns pF pF pF UNIT VI = VCC or GND 3.0 4.0 7.0 Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = ...




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