DatasheetsPDF.com

74AHC1G07

NXP

Buffer

INTEGRATED CIRCUITS DATA SHEET 74AHC1G07; 74AHCT1G07 Buffer with open-drain output Product specification File under Int...


NXP

74AHC1G07

File Download Download 74AHC1G07 Datasheet


Description
INTEGRATED CIRCUITS DATA SHEET 74AHC1G07; 74AHCT1G07 Buffer with open-drain output Product specification File under Integrated Circuits, IC06 2000 May 02 Philips Semiconductors Product specification Buffer with open-drain output FEATURES High noise immunity ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V Low power dissipation SOT353 package Output capability standard (open drain). DESCRIPTION 74AHC1G07; 74AHCT1G07 The 74AHC1G/AHCT1G07 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G07 provides the non-inverting buffer. The output of the 74AHC1G/AHCT1G07 devices is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. TYPICAL SYMBOL tPZL tPLZ CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. FUNCTION TABLE See note 1. INPUT inA L H Note 1. H = HIGH voltage level; L = LOW voltage level; Z = high impedance OFF-state. OUTPUT outY L Z PARAMETER propagation delay inA to outY propagation delay inA to outY input capacitance power dissipation capacita...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)