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an AMP company
RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz
Features
N-Channel Enhancement Mode Devi...
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an AMP company
RF MOSFET Power
Transistor, 3OW, 12V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications . .
DUI 230s
Absolute Maximum Ratings at 25°C
Parameter 1 Symbol 1 Rating 1 Units 1
Drain-SourceVoltage Gate-Source Voltage Drain-Source Current 1 Power Dissipation Junction Temperature Storage Temperature Thermal Resistance I
VDS V0s ‘Ds PO TJ I
40 20 8 175 200 -55to+150
V V A
I w I
“C “C
I
T STG
BJCI
1
I “C/w I
1
E
F
G
1 6.22
1 6.48
1 245 222 1 .llS
1 255 22s 1 ,130
1
5.64
1 2.92 1
5.79
3.30
Electrical Characteristics at 25°C
Input Capacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance C0% C Rss GP
9D
V,,=12.0 V, F=l.O MHz 120
24
pF pF dB % -
V&2.0 V&2.0
V, F=l .OMHz V, F=l .OMHz
9.0 50 -
3O:l
Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz V,,=l2.0 V, I,,=200 mA, PO,,=30 W, F=l75 MHz
VSWR-T
Specifications Subject to ChangeWithoutNotice.
MIA-COM,
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
Inc.
Asia/Pacific:
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor,
3OW, 12V
DU1230S
v2.00
Typical Broadband Performance
Curves
EFFICIENCY
V,,=lZ
60 70 g $ 2 ii b u. w
vs FR...