DUI230S

= =- ----= = an AMP company RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications . . DUI 230s Absolute Maximum Ratings at 25°C Parameter 1 Symbol 1 Rating 1 Units 1 Drain-SourceVoltage Gate-Source Voltage Drain-Source Current 1 Power Dissipation Junction Temperature Storage Temperature Thermal Resistance I VDS V0s ‘Ds PO TJ I 40 20 8 175 200 -55to+150 V V A I w I “C “C I T STG BJCI 1 I “C/w I 1 E F G 1 6.22 1 6.48 1 245 222 1 .llS 1 255 22s 1 ,130 1 5.64 1 2.92 1 5.79 3.30 Electrical Characteristics at 25°C Input Capacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance C0% C Rss GP 9D V,,=12.0 V, F=l.O MHz 120 24 pF pF dB % - V&2.0 V&2.0 V, F=l .OMHz V, F=l .OMHz 9.0 50 - 3O:l Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz V,,=l2.0 V, I,,=200 mA, PO,,=30 W, F=l75 MHz VSWR-T Specifications Subject to ChangeWithoutNotice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 3OW, 12V DU1230S v2.00 Typical Broadband Performance Curves EFFICIENCY V,,=lZ 60 70 g $ 2 ii b u. w vs FR...