RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacit...
RF MOSFET Power
Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
DU2880U
Absolute Maximum Ratings at 25°C
1U
Speciftcations Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
w
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor,
8OW, 28V
DU2880U
v2.00
Typical Broadband Performance
Curves
EFFICIENCY
I’,,=28
vs FREQUENCY
25
GAIN vs FREQUENCY
V I,,=400 mA P,,,=80 W
.”
25
50
100
150
175
25
50
100
150
175
FREQUENCY
(MHz)
FREQUENCY
(MHz)
POWER OUTPUT vs POWER INPUT
V,,=28 V lDQ=400 mA
120 ) 30 I
POWER OUTPUT vs SUPPLY
I,,=400
VOLTAGE
mA F-175 MHz P,,=3.0 W
MHz
loo 5 2 k z
80
80 40
20
5
0:
0.1
F
0.2 0.3
120 .
loo 175 -
MHz
100 MHz
f
80.
01 1 2 3 4 5 13 75 20 25 30 33
POWER INPUT(W)
SUPPLY VOLTAGE(V)
Typical Device Impedance
Frequency (MHz) z,, (OHMS) 2 LOAD (OHMS)
30
5.4 - i 4.4 1 2.5 - j 4.4
5.7 + j 4.7 1 3.4 + j 3.5 1 2.4 + j 2.4 1.7+jO.8 I I
1 50
I 100
175
~~
1
1.6-j3.4 0.7 - j 1.2
V,,=28 V, I,,=400 mA, P,,,=80 Watts Z,, is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
Specifications
Subject to Change Withou...
