DU2812OV

RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz Features l l l l l DU2812OV N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices .. Absolute Maximum Ratings at 25°C Electrical Characteristics Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C Symbol BV,,, ’05s ‘GSS V GSfW GM C ISS C oss C Rss GP ‘1D 5 13 60 10 2.0 3.0 Min 65 Max 6.0 6.0 6.0 270 240 48 - Units V mA pA V S pF pF PF dB % % V,,=O.O V, l,s=30.0 mA’ V,,=28.0 v,,=20.0 V,,=lO.O V,,=lO.O V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 v, v,,=o.o v, v,,=o.o V’ V’ Test Conditions Leakage Current Leakage Current Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss V, 1,,=600.0 V, 1,,=6000.0 mA’ A, AV,,=l .O V, 80 us Pulse’ V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, I,,=600 V, I,,=600 V, I,,=600 mA, P,,,=120.0 mA, P,,fl20.0 mA, P,,,=120.0 W, F=175 MHz W, F=l7.5 MHz W, F=175 MHz L Load Mismatch Tolerance VSWR-T - 3O:l - V,,=28.0 V, I,,=600 mA, P,e120.0 W, F=175 MHz * Per side Specifications Subject to Change Without Notke. MIA-COM, Inc. Tel. (800) 366-2266 Fax (800) 618-8883 D Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF MOSFET Power Transistor, 12OW, 28V DU2812OV v2.00 ...