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RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor
Absolute Maximum Ratinas at 25°C
( Parameter 1 Drain-SourceVoltage Gate-Source Drain-Source Voltage Current 1 Symbol ) ...
