e
an AMP company
ec== :--=s .-= = == = -r--= =z r =
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
5W,...
e
an AMP company
ec== :--=s .-= = == = -r--= =z r =
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
5W, 28V
DU2805S
v2.00
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating 65 20 I Units
Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature ( Storage Temperature Thermal Resistance I I
VOS V0s ‘05 PO T, TSTG 0JC I
V
v
1.4
15.8 200
I
* W
“C
I
1 -55to+150 11.1
I
“C “C/w
I
Electrical Characteristics
at 25°C
Specifications
Subject to Change Without Notlce.
M/A-COM,
North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
l
Inc.
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor,
5W, 28V
DU2805S
v2.00
Typical Broadband Performance
Curves
CAPACITANCES
vs VOLTAGE
25
GAIN vs FREQUENCY
V,,=28 V I,,=50 mA P,,&O W
F=l .O MHz
10 60 100 FREQUENCY (MHz) 150
200
v,, w
POWER OUTPUT
V,,=28
6
vs POWER INPUT
mA
POWER OUTPUT
V,,=28 V IDo=
vs VOLTAGE
V I,,=50
mA F=175 MHz P,,=315 mW
5 z t4 2 $3
1
/
0 0.01
0.02 0.04
0.1 0.2 POWER INPUT(W)
0.3
0.4
0.45
2.5
5
10
15
v,, (V)
20
25
30
35
- Continued
Specifications Subject to Change Wiiout Notice.
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M/A-COM,
Inc. Tel. (800) 366-2266 Fax (800) 618-8883 = Asia/Pacific: Tel. +81...
