MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by DTC114YE/D
Preliminary Data Sheet
Bias Resistor Transis...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by DTC114YE/D
Preliminary Data Sheet
Bias Resistor
Transistor
DTC114YE
3 2 1
NPN Silicon Surface Mount
Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTC114YE is housed in the SOT–416/SC–90 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2
CASE 463–01, STYLE 1 SOT–416/SC–90
OUT (3)
R1 = 10 kΩ R2 = 47 kΩ
GND (2)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Output Voltage Input Voltage Output Current Symbol VO VI IO Value 50 40 100 Unit Vdc Vdc mAdc
DEVICE MARKING
DTC114YE = 69
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Input Off Voltage (VO = 5.0 Vdc, IO = 100 µAdc) Input On Voltage (VO = 0.3 Vdc, IO = 1.0 mAdc) Output On Voltage (IO = 5.0 mAdc, II = 0.25 mAdc) Inp...