DTA6G-N

Ordering number : EN1874C Silicon Planar Type DTA6-N 6A Bidirectional Thyristor Features Peak OFF-state voltage : 200 to 600V RMS ON-state current : 6A TO-220 package. Absolute Maximum Ratings at Ta=25°C Repetitive Peak OFF-StateVoltage RMS ON-State Current Surge ON-State Current Amperes Squared-Seconds Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Junction Temperature Strage Temperature Weght VDRM IT(RMS) ITSM ∫ i2T·dt PGM PG(AV) IGM VGM Tj Tstg Tc=104°C, single-phase full-wave Peak 1 cycle, 50Hz 1ms≤t≤10ms f≥50Hz, duty≤10% f≥50Hz, duty≤10% f≥50Hz, duty≤10% DTA6C-N DTA6E-N 200 400 → → → → → → → → → min → DT6AG-N unit 600 V 6 A A A2s W W A V °C °C g unit mA V V/µs mA mA mA mA mA V V V V V °C/W → 60 → 18 → 5 → 0.5 → ±2 → ±10 → 125 → –40 to +125 → 1.8 typ max 2 Electrical Characteristics at Ta=25°C Repetitive Peak OFF-State Current Peak ON-State Voltage Critical Rate of Rise of OFF-State Voltage Holding Current Gate Trigger Current (I) (II) (III) (IV) Gate Trigger Voltage (I) (II) (III) (IV) Gate Nontrigger Voltage Thermal Resistance IDRM VTM dv/dt IH IGT IGT IGT IGT VGT VGT VGT VGT VGD Rth(j-c) Tj=125°C, VD=VDRM * : The gate trigger mode is shown below. Trigger mode I II III IV T2 + + – – T1 – – + + G + – + – ITM=9A 1.5 Tj=125°C, VD=200V (C), 10 400V (E to G) RL=100Ω 50 VD=12V, RL=20Ω 30 VD=12V, RL=20Ω 30 VD=12V, RL=20Ω 50 VD=12V, RL=20Ω 30 VD=12V, RL=20Ω 2 VD=12V, RL=20Ω 2 VD=12V, RL=20Ω 2 VD=12V, RL=20Ω 2 Tc=125...