Document
DTA125TUA / DTA125TKA / DTA125TSA
Transistors
Digital transistor (built-in resistor)
DTA125TUA / DTA125TKA / DTA125TSA
!Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !External dimensions (Units : mm)
0.65 0.65 0.7
DTA125TUA
0.3
(3)
(1)
1.25 2.1
0.15
0.2
(2)
0.1to0.4
0to0.1
Each lead has same dimensions
0.9
1.3
2.0
ROHM : UMT3 EIAJ : SC-70
(1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain)
0.4
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power DTA125TUA / DTA125TKA dissipation DTA125TSA Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Limits −50 −50 −5 −100 200 300 150 −55 ∼ +150
Unit V V
(3)
1.6 2.8
0.15
mW °C °C
0.3to0.6
0to0.1
Each lead has same dimensions
0.8
1.1
V mA
0.95 0.95 1.9 2.9
!Absolute maximum ratings (Ta = 25°C)
(2)
(1)
DTA125TKA
ROHM : SMT3 EIAJ : SC-59
(1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain)
!Package, marking, and packaging specifications
Part No. Package Marking Packaging code Basic ordering unit (pieces) DTA125TUA UMT3 9A T106 3000 DTA125TKA SMT3 9A T146 3000 DTA125TSA SPT − TP 5000
DTA125TSA
3
4
2
(15Min.)
3Min.
0.45 2.5 5 (1) (2) (3)
Taping specifications
0.5 0.45
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. −50 −50 −5 − − − 100 140 − Typ. − − − − − − 250 200 250 Max. − − − −0.5 −0.5 −0.3 600 260 − Unit V V V µA µA V − kΩ MHz IC = −50µA IC = −1mA IE = −50µA VCB = −50V VEB = −4V IC = −0.5mA , IB = −0.05mA IC = −1mA , VCE = −5V − VCE = −10V , IE = 5mA , f = 100MHz Conditions
!Circuit schematic
B
R1
C E
E : Emitter C : Collector B : Base
Transition frequency
∗ Transition frequency of the device.
∗
.