Document
DSS 2x160-0045A
Power Schottky Rectifier
Non isolated
Preliminary Data
IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V
VRSM V 45
VRRM V 45
Type
A2
miniBLOC, SOT-227 B
Anode 2
DSS 2x160-0045A
A1 Anode 1 Common cathode
Symbol IFRMS IFAVM IFAVM IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 100°C; rectangular, d = 0.5 TC = 100°C; rectangular, d = 0.5; per device TVJ = 45°C; tp = 10 ms (50 Hz), sine IAS = 28 A; L = 180 µH; TVJ = 25°C; non repetitive VA =1.5 • VRRM typ.; f=10 kHz; repetitive
Maximum Ratings 200 160 320 1600 112 2.8 1000 -40...+150 150 -40...+150 A A A A mJ A V/ms °C °C °C W Nm/lb.in. Nm/lb.in. g
Features • International standard package miniBLOC • Epoxy meets UL 94V-0 • Very low VF • Extremely low switching losses • Low IRM-values Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters
TC = 25°C mounting torque (M4) terminal connection torque (M4) typical
410 1.1-1.5/9-13 1.1-1.5/9-13 30
Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses
Symbol IR VF
Conditions TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM IF = 160 A; IF = 320 A; TVJ =125°C TVJ = 25°C TVJ =125°C
Characteristic Values typ. max. 4 40 0.73 0.80 0.99 0.3 0.15 mA mA V V V K/W K/W
Dimensions see outlines.pdf
RthJC RthCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions.
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© 2000 IXYS All rights reserved
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DSS 2x160-0045A
300 A 100 IF IR
100 mA 10
TVJ=150°C
10000 pF CT
125°C
1
100°C
1000 10
TVJ = 150°C 125°C 25°C
0.1 75°C
50°C
0.01
25°C TVJ= 25°C
1 0.0
0.001 0.2 0.4 0.6 VF 0.8 V 1.0 0 10 20 30 40 V 50 VR
100 0 10 20 30 VR 40 V 50
Fig. 1 Maximum forward voltage drop characteristics
240 A 200 IF(AV) 160 120 80 d=0.5 DC
Fig. 2 Typ. value of reverse current IR versus reverse voltage VR
160 W 140 120 P(AV) 100 80 60 40 d= DC 0.5 0.33 0.25 0.17 0.08
Fig. 3 Typ. junction capacitance CT versus reverse voltage VR
40 0 0 40 80 TC 120 °C 160
20 0 0 50 100 IF(AV) 150 A 200
Fig. 4 Average forward current IF(AV) versus case temperature TC
0.4 K/W ZthJC 0.1
D=0.5 0.33 0.25 0.17 0.08
Fig. 5 Forward power loss characteristics
Single Pulse (Thermal Resistance)
0.01 0.001
DSS2x160-0045A
0.01
0.1
1s t
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
824
© 2000 IXYS All rights reserved
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