FRED
Advanced Technical Information
DSEP 30-12CR
HiPerDynFREDTM
with soft recovery
(Electrically Isolated Back Surface)
IF...
Description
Advanced Technical Information
DSEP 30-12CR
HiPerDynFREDTM
with soft recovery
(Electrically Isolated Back Surface)
IFAV = 30 A VRRM = 1200 V trr = 20 ns
VRSM V 1200
VRRM V 1200
Type
A
C
ISOPLUS 247TM
C A Isolated back surface *
DSEP 30-12CR
A = Anode, C = Cathode * Patent pending
Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Weight
Conditions TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 70 30 tbd 250 0.2 0.1 -55...+175 175 -55...+150 A A A A mJ A °C °C °C W kV N/lb. g
Features
q
q q q q q q q q q
TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA typical
165 2.5 10...50/2...10 6
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432
Mounting force with clip
Applications
q
q q q
Symbol IR x
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C
Characteristic Values typ. max. 250 2 3.1 5.0 0.9 0.25 20 4.0 µA mA V V K/W K/W ns
q
q q q
VF y RthJC RthCH t rr IRM
Antiparallel diode for high frequency switching devices Antisat...
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