DatasheetsPDF.com

DSEP30-12CR

IXYS Corporation

FRED

Advanced Technical Information DSEP 30-12CR HiPerDynFREDTM with soft recovery (Electrically Isolated Back Surface) IF...


IXYS Corporation

DSEP30-12CR

File Download Download DSEP30-12CR Datasheet


Description
Advanced Technical Information DSEP 30-12CR HiPerDynFREDTM with soft recovery (Electrically Isolated Back Surface) IFAV = 30 A VRRM = 1200 V trr = 20 ns VRSM V 1200 VRRM V 1200 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 30-12CR A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Weight Conditions TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 tbd 250 0.2 0.1 -55...+175 175 -55...+150 A A A A mJ A °C °C °C W kV N/lb. g Features q q q q q q q q q q TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA typical 165 2.5 10...50/2...10 6 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Mounting force with clip Applications q q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 250 2 3.1 5.0 0.9 0.25 20 4.0 µA mA V V K/W K/W ns q q q q VF y RthJC RthCH t rr IRM Antiparallel diode for high frequency switching devices Antisat...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)