Epitaxial Diode
DSEP 15-06B
HiPerFREDTM Epitaxial Diode
with soft recovery
Preliminary data
IFAV = 15 A VRRM = 600 V = 25 ns trr
A C
...
Description
DSEP 15-06B
HiPerFREDTM Epitaxial Diode
with soft recovery
Preliminary data
IFAV = 15 A VRRM = 600 V = 25 ns trr
A C
VRSM V 600
VRRM V
Type
TO-220 AC
C
600
DSEP 15-06B
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
D4
Symbol IFRMS IFAVM IFSM EAS
Conditions TC = 130°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive; IAS = 1 A; L = 100 µH L = 20 mH VA = 1.5·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 35 15 110 0.1 20 0.1 -55...+175 175 -55...+150 A A Features A
G G
mJ mJ A °C °C °C W Nm g
G G G G
IAR TVJ TVJM Tstg Ptot Md Weight
G
International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TC = 25°C mounting torque typical
95 0.4...0.6 2
Applications
G
G G G
Symbol IR x
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C
Characteristic Values typ. max. 100 0.5 1.55 2.52 1.6 0.5 µA mA V V K/W K/W ns A
G
G G G
VF y RthJC RthCH t rr IRM
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
Advantages
G
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C
25
30 2.6
G
G
Pulse te...
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