DSEI12

Fast Recovery Epitaxial Diode (FRED) DSEI 12 IFAVM = 14 A VRRM = 600 V trr = 35 ns VRSM V 640 VRRM V 600 Type A C TO-220 AC C A DSEI 12-06A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 25 14 150 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm g Features q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-220 AC Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque Applications q q q q 62 0.4...0.6 2 q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 16 A; Characteristic Values typ. max. 50 25 3 1.5 1.7 1.12 23.2 2 0.5 60 mA mA mA V V V mW K/W K/W K/W ns A q Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IR VR ...