Epitaxial Diode
DSEC 60-06A DSEC 60-06B
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x 30 A VRRM = 600 V ...
Description
DSEC 60-06A DSEC 60-06B
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x 30 A VRRM = 600 V trr = 30/35 ns
TO-247 AD
VRSM V 600 600
VRRM V 600 600
Type
DSEC 60-06A DSEC 60-06B
A
C
A
A C A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM
Conditions rect., d = 0.5; TC (Vers. A) = 135°C TC (Vers. B) = 125°C TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive
Both Versions Maximum Ratings 70 30 A A Features 250 0.2 0.1 -55...+175 175 -55...+150 A mJ A °C °C °C W Nm g
q q q q q
IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight
q q q
International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TC = 25°C mounting torque typical
165 0.8...1.2 6
Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
q q
Symbol IR x
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C
Characteristic max. Values Vers. A Vers. B 250 1 1.25 1.60 0.9 0.25 250 2 1.56 2.51 0.9 0.25 typ. 30 typ. 4 mA mA V V K/W K/W ns A
q
q
VF y RthJC RthCH trr IRM
q q q
IF = 1 A; -di/dt = 200 A/ms; VR = ...
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