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2SD2571

Toshiba Semiconductor
Part Number 2SD2571
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching ...
Datasheet PDF File 2SD2571 PDF File

2SD2571
2SD2571


Overview
2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 ± 10 100 ± 10 8 2 3 0.
5 2.
0 25 150 −55 to 150 Unit V V V A A W °C °C ...



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