2SD2561

Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2561 100max 100max 150min 5000min∗ 2.5max 3.0max 70typ 120typ V V MHz pF 20.0min 4.0max 2 3 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2561 150 150 5 17 1 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 µA µA V a b 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 0.8typ tstg (µs) 4.0typ tf (µs) 1.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 17 50mA V CE ( sa t ) – I B Characteristics (Typical) 3 I C – V BE Temperature Characteristics (Typical) 17 15 (V CE =4V) 10mA A 2m 3m 1 .5 m A 15 A 1. 0m A Collector Current I C (A) 0. 8m A 2 10 Collector Current I C (A) 10 mp) e Te (Cas 25˚C p) Tem I C =.15A I C =.10A 1 I C =.5A (Ca ...