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2SD2558
Silicon NPN Transistor
Description
Equivalent circuit C Darlington 2SD2558 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz 2SD2558 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V MHz 16.2 B (7 0 Ω ) E Silicon
NPN
Triple Diffused Planar
Transistor
sAbsolute ma...
Sanken electric
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