2SD2549

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit: mm s Features q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 80 6 5 3 20 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5 2.6±0.1 0.55±0.15 1 2 1:Gate 2:Drain 3:Source TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCE = 70V, VBE = 0 VCE = 70V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V min typ max 100 100 1 Unit µA µA mA V 80 7...