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2SD2539

Toshiba Semiconductor

NPN Triple Diffused Planar Silicon Transistor

2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l H...


Toshiba Semiconductor

2SD2539

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2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) l High Speed : tf = 0.3 µs (Typ.) l Bult-in Damper Type l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 7 14 3.5 50 150 −55~150 EQUIVALENT CIRCUIT UNIT V V V A A W °C °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16E3A Weight: 5.5 g (typ.) 1 2001-08-20 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time SYMBOL TEST CONDITION ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 400 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5A IC = 5 A, IB = 1.0 A IC = 5 A, IB = 1.0 A VF IF = 5 A fT VCE = 10 V, IC = 0.1 A Cob VCB = 10 V, IE = 0, f = 1 MHz tstg ICP = 5 A, IB1 (end) = 1.0 A tf fH = 15.75 kHz Fig.1 SWITCHING TIME TEST CIR...




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