2SD2538

Power Transistors 2SD2538 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification I Features High forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 4 2 35 2 150 −55 to +150 °C °C Unit V V V A A W 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Full Pack Package Internal Connection C B Junction temperature Storage temperature E I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P Q VBE fT ton tstg tf * Conditions VCB = 60 V, IE = 0 VCE = 30 V, IB = 0 VEB = 5 V, IC = 0 IC = 30 mA, IB = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA VCE = 4 V, IC = 2 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = −8 mA VCC = 50 V Min Typ Max 1 2 2 U...