2SD2536

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 85 V Collector-emitter voltage VCEO 100 ± 15 V Emitter-base voltage VEBO 6 V Bias voltage VB 20 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation PC 0.9 W JEITA ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit BASE RB 3.6 kΩ COLLECTOR ≈ 5 kΩ ≈ 300 Ω EMITTER 1 http:/...