TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2531
Power Amplifier Applications
2SD2531
Unit: mm
• Low collec...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SD2531
Power Amplifier Applications
2SD2531
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (typ.) (IC = 2.5 A, IB = 0.25 A)
High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 4 A
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
25
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
SC-67 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ...
