Power Transistors
2SD2469, 2SD2469A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB1607
Unit...
Power
Transistors
2SD2469, 2SD2469A
Silicon
NPN epitaxial planar type
For power switching Complementary to 2SB1607
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q q
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 150 80 100 7 15 7 40 2 150 –55 to +150 Unit V
15.0±0.3
3.0±0.2
Parameter Collector to base voltage Collector to 2SD2469 2SD2469A 2SD2469
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.7–0.2
+0.5
s Absolute Maximum Ratings
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
emitter voltage 2SD2469A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
7°
1 2 3
1:Base 2:Collector 3:Emitter TO–220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2469 2SD2469A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz µ...
