2SD2423

2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 1 3 2 1 2, 4 ID 2 kΩ (Typ) 0.5 Ω (Typ) 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD2423 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: Symbol VCBO VCEO VEBO IC PC * Tj Tstg ID 1 Ratings 50 50 7 1.5 1 150 –55 to +150 1.5 Unit V V V A W °C °C A 1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm). Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 50 7 — 2000 — — — — — Typ — — — — — — — — — — — Max 70 — 70 — 10 10000 1.5 2.3 2.0 2.5 3.5 V V V V V Unit V V V V µA Test conditions I C = 100 µA, IE = 0 I C = 10 mA, RBE = ∞ I C = 1.5 A, RBE = ∞, L = 10 mH*1 I E = 50 mA, IC = 0 VCE = 40 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector to emitter saturation voltage Base to emitter saturation voltage Base to...