2SD2390 Darlington
Equivalent circuit C B
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2S...
2SD2390 Darlington
Equivalent circuit C B
(70Ω) E
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SB1560)
Application : Audio, Series
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
Ratings
Unit
VCBO
160
V
VCEO
150
V
VEBO
5
V
IC
10
A
IB
1
A
PC
100(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=160V
VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=–2A VCB=10V, f=1MHz
Ratings 100max 100max 150min 5000min∗ 2.5max 3.0max
55typ 95typ
Unit µA µA V
V V MHz pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton
tstg
tf
(V)
(Ω)
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
70
10
7
10
–5
7
–7
0.5typ 10.0typ 1.1typ
External Dimensions MT-100(TO3P)
2.0
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
4.0
19.9±0.3
20.0min 4.0max
a
ø3.2±0.1
b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 2.0g
a. Part No.
b. Lot No.
Collector Current IC(A) 10mA 2.5mA
I C– V CE Characteristics (Typical)
10
2mA
1.5mA
8
1.2mA
1mA
6
0.8mA
4
0.6mA
IB=0.4mA 2
0
0
2
4
6
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
IC=10A
IC=7A
1
IC=5A
0 0.2 0.5
...
