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2SD2385 Dataheets PDF



Part Number 2SD2385
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SD2385 Datasheet2SD2385 Datasheet (PDF)

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140.

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