2SD2384

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140 5 7 0.1 100 150 −55 to 150 Equivalent Circuit Unit V V V A A W °C °C COLLECTOR BASE JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) ≈ 100 Ω EMITTER 1 2003-02-04 2SD2384 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 6 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ― ― 140 5000 2000 ― ― ― ― Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000 Typ. Max Unit ― 5.0 µA ― 5.0 µA ―― V ― 30000 ― ―― ― 2.5 V ― 3.0 V 30 ― MHz 90 ― pF Marking TOSHIBA 2SD2384 JAPAN hFE classif...