Transistors
2SD2358
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to...
Transistors
2SD2358
Silicon
NPN epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SB1538 I Features
Low collector to emitter saturation voltage VCE(sat): < 0.15 V Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45−0.05
+0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 10 10 5 1.2 1 1 150 −55 to +150 Unit V V V A A W °C °C
1
2
3
0.45−0.05
+0.1
2.5±0.5
2.5±0.5
Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1: Emitter 2: Collector 3: Base MT2 Type Package
1.2±0.1 0.65 max.
0.1 0.45+ − 0.05
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion
2.5±0.1
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 7 V, IE = 0 IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCE...
