Transistor
2SD2357
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1537
Unit: mm
...
Transistor
2SD2357
Silicon
NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1537
Unit: mm
s Features
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
q q q
1.0–0.2
+0.1
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.4max.
45°
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 10 10 5 1.2 1 1 150 –55 ~ +150 1cm2 Unit
3
2
1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
marking
V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package
Marking symbol : 1M
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 7V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA** IC = 500mA, IB = 5m...
