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2SD2352

Part Number	2SD2352
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications 2SD2352 Unit: mm • High DC cu...
Datasheet	2SD2352 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications 2SD2352 Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.
3 V (typ.
) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 2 A Pulse ICP 4 Base current IB 0.
4 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Note: Using continuously under heavy loads (e.
g.
the app...

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