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2SD2337

Hitachi Semiconductor

Silicon NPN Transistor

2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection outpu...


Hitachi Semiconductor

2SD2337

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2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings 200 150 6 2 5 1.5 20 150 –45 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 6 — 1 Typ — — — — — — — Max — — 1 320 — 3.0 1.0 Unit V V µA Test conditions I C = 50 mA, RBE = ∞ I E = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 I C = 500 mA, IB = 50 mA*2 VCE = 4 V, IC = 50 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE 60 60 — — V V Notes: 1. The 2SD2337 is grouped by hFE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 D 160 to 320 2 2SD2337 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 10 5 20 Collector current IC (A) 2 1.0 0.5 0.2 0.1 150 0.05 (150 V, 65 mA) 2 5 10 20 50 100 200 Collector to emitter voltage VCE (V) IC (max) (Continuous)...




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