2SD2242A

Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features 13.0±0.2 4.2±0.2 q q q 2.5±0.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2242 2SD2242A 2SD2242 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip Ratings 60 80 60 80 5 8 4 15 2 150 –55 to +150 Unit V 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 emitter voltage 2SD2242A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2242 2SD2242A 2SD2242 2SD2242A 2SD2242 2SD2242A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V 20 0.5 4 1 60 80 1000 2000 min typ E max 200 200 50...