Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise a...
Transistor
2SD2240, 2SD2240A
Silicon
NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.6±0.15
Unit: mm
s Features
q q q
0.4
0.8±0.1
0.4
0.2–0.05 0.15–0.05
+0.1
High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.75±0.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2240 2SD2240A 2SD2240 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
0.45±0.1 0.3
(Ta=25˚C)
Ratings 150 185 150 185 5 100 50 125 125 –55 ~ +125 Unit V
emitter voltage 2SD2240A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package
Marking symbol : P(2SD2240) L(2SD2240A)
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SD2240 2SD2240A
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob NV
*
Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT
min
typ
0 to 0.1
0.2±0.1
max 1
+0.1
Unit µA V V
150 185 5 130 330 1 150 2.3 150
Emitter to base voltage Forward current transfer ratio Collector to emitter satur...