2SD2225

Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 120 120 5 1 0.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board +0.1 s Absolute Maximum Ratings 0.45–0.05 +0.1 (Ta=25˚C) 2.5±0.5 2.5±0.5 (HW type) s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage (Ta=25˚C) Symbol VCEO VEBO hFE1 *1 Conditions IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 VCE = 5V, IC = 100mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 200MHz*2 VCB = 10V, IE = 0, f = 1MHz min 120 5 90 50 100 typ...