2SD2136

Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ ■ Features 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 60 6 3 5 1.5 150 −55 to +150 Unit V V 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 V A A W °C °C 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage *1 Symbol VCEO VBE ICES ICEO IEBO hFE1 *2 hFE2 *1 *1 Conditions IC = 30 mA, IB = 0 VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 30 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 5 V, IE = − 0.1 A, f = 200 MHz IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A Min 60 Typ Max Unit V 1.8 200 300 1 40 10 1.2 220 0.5 2.5 0.4 250 V µA µA mA  V MHz µs µs µs Collector-emitter cutoff current (Emitter-base short) Collec...