2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S...
2SD2115(L)/(S)
Silicon
NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Rating 150 60 5 2 2.5 18 150 –55 to +150
Unit V V V A A W °C °C
2SD2115(L)/(S)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 — 150 — — — Typ — — — — — — — — Max — — — 10 — 0.8 1.3 0.6 V V µs Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.5 A*1 I C = 1.5 A, IB = 0.05 A*1 I C = 1.5 A, IB = 0.05 A*1 I C = 1.5 A, IB1 = –IB2 = 50 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. V(BR)EBO I CBO hFE VCE(sat) VBE(sat) tf
Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3.0
Area of Safe Operation iC(peak) IC(max) Collector current IC (A)
s ) 1m 5°C s =2 0m (T C =1 tion PW era Op DC
1.0
20
0.3
10
0.1
Ta = 25°C, 1 shot pulse
0.03 0 50 1...