2SD2104

2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Rating 120 120 7 8 12 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2 2SD2104 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 20 10 Collector current IC (A) 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 C...