2SD2079

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2079 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE (1) = 2000 (min) Low saturation voltage: VCE (sat) (1) = 1.5 V (max) Complementary to 2SB1381. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 100 100 7 5 8 0.5 2.0 30 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 http://store.iiic.cc/ 2006-11-21 Electrical Characteristics (Tc = 25°C) Characte...