2SD2019

2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 1 2 3 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 150 80 8 1.5 3 10 150 –55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 80 7 — — 2000 5000 1000 — — — Typ — — — — — — — — — — — Max — — — 5 5 — 30000 — 1.5 2.0 3.0 V V V Unit V V V µA µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 65 V, RBE = ∞ VCE = 2 V, IC = 0.15 A*1 VCE = 2 V, IC = 1 A*1 VCE = 2 V, IC = 1.5 A*1 I C = 1 A, IB = 1 mA*1 I C = 1 A, IB = 1 mA*1 I D = 1.5 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. VCE(sat) VBE(sat) VD 2 2SD2019 Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10 iC (peak) Collector current IC (A)...