Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
High forward current transfer ratio hFE Built-in 60 V Zener diode between base to collector
φ 3.16±0.1
3.8±0.3 11.0±0.5
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter...
