2SD2016 Darlington
Equivalent C circuit B
(2kΩ) (200Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : ...
2SD2016 Darlington
Equivalent C circuit B
(2kΩ) (200Ω) E
Silicon
NPN Triple Diffused Planar
Transistor
Application : Igniter, Relay and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO
200
V
VEBO
6
V
IC
3
A
IB
0.5
A
PC
25(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=200V
VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz
(Ta=25°C)
Ratings 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ
Unit µA mA V
V V MHz pF
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2 2.8 c0.5
4.0±0.2
16.9±0.3 8.4±0.2
ø3.3±0.2 a b
3.9 ±0.2 0.8±0.2
13.0min
1.35±0.15
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45
+0.2 -0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
a. Part No.
B C E b. Lot No.
DC Current Gain hFE
Collector Current IC(A)
I C– V CE Characteristics (Typical)
3
3mA
1.5mA
1mA
0.5mA 2
IB=0.3mA
1
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 3
Collector Current IC(A) 125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp)
2
1 125˚C
25˚C
–5 5 ˚ C
0 0.2
1 Base Current IB(mA)
2
1
0
3
0
1
2
Base-Emittor Voltage VBE(V)
10000 5000
h FE– I C Characteristics (Typical)
(VCE=4V)
1000 500
10...
