2SD2014 Darlington
Equivalent C circuit B
(3kΩ) (200Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to ...
2SD2014 Darlington
Equivalent C circuit B
(3kΩ) (200Ω) E
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SB1257) Application : Driver for Solenoid, Relay and Motor, Series
Regulator, and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
120
V
VCEO
80
V
VEBO
6
V
IC
4
A
IB
0.5
A
PC
25(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=120V
VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz
(Ta=25°C)
Ratings 10max 10max 80min
2000min 1.5max 2.0max 75typ 45typ
Unit µA mA V
V V MHz pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
30
10
3
10
–5
10
IB2 (mA)
–10
ton (µs)
1.0typ
tstg (µs)
4.0typ
tf (µs)
1.5typ
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2 2.8 c0.5
4.0±0.2
16.9±0.3 8.4±0.2
ø3.3±0.2 a b
3.9 ±0.2 0.8±0.2
13.0min
1.35±0.15
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45
+0.2 -0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Part No. b. Lot No.
Collector Current IC(A) IB=20mA
I C– V CE Characteristics (Typical)
4 1.0mA 0.8mA
3
0.6mA
0.5mA
2
0.4mA
1
0.3mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Collector Current IC(A) 125˚C (Case Temp) 25˚C (Case Temp) –30˚C (Case Temp)
V CE( s a t ) – I B Characteristi...
