Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
Unit: mm
0.7±0.1
s Features
q q q q
1...
Power
Transistors
2SD1964
Silicon
NPN epitaxial planar type
For power switching
Unit: mm
0.7±0.1
s Features
q q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 80 7 25 15 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
Solder Dip
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
14.0±0.5
4.0
s Absolute Maximum Ratings
16.7±0.3
7.5±0.2
1.3±0.2
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A VCE = 2V, IC = 8A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 0.7A, IB2 = – 0.7A, VCC = 50V 20 0.5 2.0 0.2 80 45 90 30 0.5 1.5 1.5 2.5 V V V V MHz µs µs µs 260 min typ max 10 50...