2SD1935

Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications · AF power amplifier, medium-speed switching, smallsized motor drivers. Features · Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)15 (–)15 (–)5 (–)0.8 (–)3 200 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA 135* (–)100 (–)100 900* (600) hFE2 VCE=(–)2V, IC=(–)800mA 80 * : The 2SB1295/2SD1935 are classified by 50mA hFE as follows : 2SB1295 135 5 270 200 6 400 300 7 600 Marking: 2SB1295 : UL/2SD1935 : CT hFE rank: 2SB1295 : 5, 6, 7/2SD1935 : 5, 6, 7, 8 Unit V V V A A mW ˚C ˚C Unit nA nA 2SB1935 135 5 270 200 6 400 300 7 600 450 8 900 Any and all SANYO products described or contained herein do not have specif...