2SD1922
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-92MOD
2
3 ID
1. Emitter 2. Collec...
2SD1922
Silicon
NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-92MOD
2
3 ID
1. Emitter 2. Collector 3. Base
1
3 2 1
2SD1922
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) ID PC Tj Tstg Ratings 25 25 6 0.8 1.5 0.8 0.9 150 –55 to +150 Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 — — — 250 — — Typ — — — — — — — — — — Max — 35 35 — 0.2 0.5 0.2 1200 0.3 1.1 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I C = 0.8 A, RBE = ∞, L = 20 mH I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 I C = 0.8 A, IB = 80 mA*1 I D = 0.8 A*1
Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test I EBO hFE VCE(sat) VD
2
2SD1922
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Area of Safe Operation 10 3 1.0 0.3 0.1 0.03 Ta = 25°C 1 Shot Pulse iC(peak) IC(max)
DC
1 m s
Col...