2SD1908

Ordering number : EN3971 NPN Epitaxial Planar Silicon Transistor 2SD1908 CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed. unit: mm Especially suited for use in high-definition CRT display : 2049B-TO-220MF VCC=6 to 12V. Wide ASO and highly resistant to breakdown. [2SD1908] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings E : Emitter C : Collector B : Base SANYO : TO-220MF Tc=25°C 330 150 6 7 12 4 1.65 50 150 –55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tf Conditions VCB=200V, IE=0 VEB=5V, IC=0 VCE=1V, IC=1A VCE=1V, IC=5A VCE=10V, IC=0.5A IC=5A, IB=0.5A IC=5A, IB=0.5A IC=1mA, IE=0 IC=1mA, RBE=∞ IE=1mA, IC=0 IC=5A, IB1=–IB2=0.5A Ratings min typ max 100 100 50 40 1 1.2 330 150 6 0.5 MHz V V V V V µs Unit µA mA 15 10 10 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Ch...