2SD1820

Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm s Features q q 2.0±0.2 1.3±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 30 60 25 50 5 1 500 150 150 –55 ~ +150 Unit 0.65 1 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1820 2SD1820A 2SD1820 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 0.2 0.9±0.1 0.7±0.1 V emitter voltage 2SD1820A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector 0 to 0.1 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : W(2SD1820) X(2SD1820A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1820 2SD1820A 2SD1820 2SD1820A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 0.15–0.05 +0.1 0.3–0 +0.1 Unit µA V 30 60 25 50 5 85 40 0.35 200 6 *2 V V 160 340 Emitter to ba...