Power Transistors
2SD1776, 2SD1776A
Silicon NPN triple diffusion planar type
For power amplification with high forward ...
Power
Transistors
2SD1776, 2SD1776A
Silicon
NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q q
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1776 2SD1776A 2SD1776 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
(TC=25˚C)
Ratings 80 100 60 80 6 4 2 0.5 25 2 150 –55 to +150 Unit V
16.7±0.3 14.0±0.5
emitter voltage 2SD1776A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V A A A W ˚C ˚C
Solder Dip
4.0
7.5±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1776 2SD1776A
(TC=25˚C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 300mA IC = 1A, IB = 25mA IC = 1A, IB = 25mA VCE = 12V, IC = 200mA, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 1A, IB1 = 25mA, IB2 = –25mA, VCC = 50V 40 30 0.6 2.5 1 60 80 500 1500 1 1.2 V V MHz pF µs µs µs min typ max 100 100 100 100 Unit µA µA µA V
Collector cutoff current E...
